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Friday, July 24, 2020 | History

3 edition of Extended Abstracts of International Workshop on Gate Insulator Iwgi 2001 found in the catalog.

Extended Abstracts of International Workshop on Gate Insulator Iwgi 2001

November 1-2, 2001 Tokyo, Japan

by Japan) International Workshop on Gate Insulator (1st : 2001 : Tokyo

  • 351 Want to read
  • 31 Currently reading

Published by Institute of Electrical & Electronics Enginee .
Written in English

    Subjects:
  • Electronics engineering,
  • Mathematics and Science,
  • Technology & Engineering,
  • Technology & Industrial Arts,
  • Science/Mathematics,
  • General,
  • Electronics - Microelectronics,
  • Congresses,
  • Dielectrics,
  • Electric insulators and insula,
  • Electric insulators and insulation,
  • Gate array circuits

  • The Physical Object
    FormatPaperback
    Number of Pages240
    ID Numbers
    Open LibraryOL12489688M
    ISBN 104891140216
    ISBN 109784891140212

    You and Pin Su, "Investigation of Gate Length Dependence of Memory Window for 2D Ferroelectric-FET NVMs Considering the Impact of Spacers," Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, September   In this paper, we review recent progress in the understanding of insulator/semiconductor interfaces in organic field-effect transistors (OFETs). We would like to emphasize that the choice of gate insulator is as important for high-quality OFET devices as the semiconductor itself, especially because of the unique transport mechanisms operating in them.

    Johnston, and J.B. Bernstein, "Latent Reliability Degradation of Ultra-Thin Oxides After Heavy-Ion Irradiation and Gamma-Ray Irradiation," IEEE International Integrated Reliability Workshop (IRW) Final Report, IEEE #01TH, p. , ().   The electrical properties of HfO 2-based metal–insulator–semiconductor capacitors have been systematically investigated by means of I–V and C–V characteristics, admittance spectroscopy, deep level transient spectroscopy, conductance transient, and flat band voltage transient techniques. Attention is also given to the study of the temperature dependence of the leakage current.

      Le Hai Van, Mitsue Takahashi, Shigeki Sakai, " μm-Gate-Length Ferroelectric- Gate Field-Effect Transistors with Long Data Retention," Extended Abstracts of the 16th Workshop on Gate Stack Technology and Physics, Thin Films and Surface Physics Division and Silicon Technology Division of THE JAPAN SOCIETY OF APPLIED PHYSYCS, pp,   Lucovsky, in Extended Abstracts of the 6th Workshop on Formation, Characterization, and Reliability of Ultrathin Silicon Oxides, Atagawa Heights, Japan, 26–27 January


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Extended Abstracts of International Workshop on Gate Insulator Iwgi 2001 by Japan) International Workshop on Gate Insulator (1st : 2001 : Tokyo Download PDF EPUB FB2

Get this from a library. Extended abstracts of International Workshop on Gate Insulator: IWGI November, Tokyo, Japan. [Ōyō Butsuri Gakkai.;]. Gate Insulator,IWGIExtended abstracts of International Workshop on. IWGI International Workshop on Gate Insulator Responsibility: sponsored by JSAP--The Japan Society of Applied Physics [and others].

Conference: Gate Insulator, IWGI Extended Abstracts of International Workshop on. Extended Abstracts of International Workshop on Gate Insulator. IWGI (IEEE Cat. NoEX) ()Cited by: 2.

() Extended Abstracts of International Workshop on Gate Insulator. IWGI (IEEE Cat. NoEX). p H. BENDER, T. CONARD, H. NOHIRA, J. PETRY, O. RICHARD, C. ZHAO, B. Extended Abstracts of International Workshop on Gate Insulator IWGI NovemberTokyo, Japan Sponsored by JSAP: The Japan Society of Applied Physics JSAP Thin Film and Surface Physics Division JSAP Silicon Technology Division Cosponsored by JEITA: Japan Electronics and Information Technology Industries Association Technically.

This paper summarizes the current understanding regarding these issues, and identifies areas on which device scaling research could focus. Published in: Extended Abstracts of International Workshop on Gate Insulator. IWGI (IEEE Cat. NoEX). Chau R, Datta S, Doczy M, Kavalieros J, Metz M.

Gate dielectric scaling for high-performance CMOS: from SiO 2 to high-K. In: Extended abstracts of international workshop on gate insulator (IWGI). Tokyo, Japan; Nov. A route is presented for activation of hydrogen-terminated Si() prior to atomic layer deposition.

It is based on our discovery from in situinfrared spectroscopythat organometallicprecursors can effectively initiate oxide growth.

A. Kingon, J-P. Maria, D. Wicaksana, C. Hoffnan, in Extended Abstract of International Workshop on Gate Insulator (IWGI), vol 36 () Google Scholar R. Roth, J. Dennis, H. McMurdie, Phase Diagrams for Ceramists, vol.

6 p.Fig. (The American Ceramics Society, ) Google Scholar Extended Abstracts of International Workshop on Gate Insulator, IWGI About Extended Abstracts of International Workshop on Gate Insulator, IWGI Search "SCOPUS" Search ISSN,ISBN,CODEN; Detailed information; Page: Publication year: JST Material Number: SCOPUS.

• [10] R. Chau et al., Extended Abstracts of International Workshop on Gate Insulator (IWGI), Tokyo, Japan, p, Nov.

Recommended Teacher Tech Tips Weekly. Abstract: The exponential growth of the silicon industry can be attributed to that fact that silicon has a native oxide that is silicon dioxide. With SiO/sub 2/ soon approaching fundamental limit, we must find an alternate to SiO/sub 2/ or a new switch to replace MOSFET.

In this paper we focus on leading alternate gate. Buy International Workshop on Gate Insulator (IWGI ) from Waterstones today. Click and Collect from your local Waterstones or get FREE UK delivery on orders over £ Original language: English: Title of host publication: Extended Abstracts of International Workshop on Gate Insulator, IWGI Publisher: Institute of Electrical and Electronics Engineers Inc.

Stanford Libraries' official online search tool for books, media, journals, databases, government documents and more. Article “An epitaxial AlN gate insulator for Si integrated circuits” Detailed information of the J-GLOBAL is a service based on the concept of Linking, Expanding, and Sparking, linking science and technology information which hitherto stood alone to support the generation of ideas.

By linking the information entered, we provide opportunities to make unexpected discoveries and obtain. Title: Publisher: Begin Year: End Year: Source: GaAs on Si, IEE Colloquium on: IEL: INDEST: GaAs Reliability Workshop, Proceedings: IEL: Y.J.

Chabal, Chemistry and Physics of Solid Surfaces VII, eds. Vanselow, R.F. Howe (Springer, Berlin, ), pp. – Google Scholar. IWGIExtended Abstracts of the International Workshop on Gate Insulator.

Y Wang, E A Irene, +15 authors J W Maes; IWGIExtended Abstracts of the International Workshop on Gate Insulator; ; Science. M Ritala, K Kukli, +4 authors J Keinonen; Science; ; IBM J. Res. Dev. S H Lo, D A Buchanan, Y Taur; IBM J. Res. Dev. International Scientific Journal & Country Ranking. Only Open Access Journals Only SciELO Journals Only WoS Journals.

Metal oxides of high dielectric constant are candidates to substitute SiO 2 as gate dielectric in complementary metal-oxide-semiconductor technology. In this contribution we present the application of X-ray techniques to the study of thermal stability of 5- and nm-thick HfO 2 deposited by atomic layer deposition.

Grazing incidence X-ray diffraction spectra are refined by Rietveld analysis.A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text.

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